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T8 - 3D Flash Memory from Technology to the System_past, present and future develop.pdf

2024-02-04
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1、 2024 IEEE International Solid-State Circuits Conference3D Flash Memory from Technology to the System:past,present and future developments Violante MoschianoV.Moschiano2024 IEEE-ISSCCT8:3D Flash Memory from Technology to the System:past,present and future developments1 of 68 2024 IEEE International

2、Solid-State Circuits ConferenceIntroduction NAND FLASH BasicsFrom 2D to 3D NAND3D NAND architecture From Component to the SYSTEM Whats next SummaryV.Moschiano 2024 IEEE-ISSCCT8:3D Flash Memory from Technology to the System:past,present and future developmentsOutline2 of 68 2024 IEEE International So

3、lid-State Circuits ConferenceIntroduction:Memory V.Moschiano 2024 IEEE-ISSCCT8:3D Flash Memory from Technology to the System:past,present and future developmentsDRAMSRAMNAND FLASHStorage Attribute Charge Voltage Level VthBasic Element Cell Size 6/8F260/120 F24F2Process DRAMLogic FLASH3 of 68 2024 IE

4、EE International Solid-State Circuits ConferenceIntroduction:Memory V.Moschiano 2024 IEEE-ISSCCT8:3D Flash Memory from Technology to the System:past,present and future developmentsDRAMSRAMNAND FLASHStorage Attribute Charge Voltage Level VthData Margin/Reliability Medium Large SmallMultiLevel NONOYES

5、Memory Type Volatile(refresh)Volatile(no refresh)NON-Volatile 4 of 68 2024 IEEE International Solid-State Circuits ConferenceIntroduction:Memory Market V.Moschiano 2024 IEEE-ISSCCT8:3D Flash Memory from Technology to the System:past,present and future developmentsWSTS forecast Summary Status of the

6、Memory Industry 2023,Yole Intelligence,July 2023Memory is 22%of the entire semiconductor market NAND Flash is 41%of the entire memory market 59B/144B80593.20.710.62022$BDRAMNANDNOR(NV)SRAM/FRAMEEPROMEM02040608010012014016020222023F2024F$144B-41%+55%5 of 68 2024 IEEE International Solid-State Circuit

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